PART |
Description |
Maker |
HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HYMD232646DP8-H HYMD232726DP8-H HYMD264726DP8-H HY |
1184pin Unbuffered DDR SDRAM DIMMs 32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184 16M X 16 DDR DRAM MODULE, 0.7 ns, DMA184
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2,银行注册内存模块(32M × 72配置2组寄存同步动态内存模块)
|
International Business Machines, Corp.
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT) Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http:// Elpida Memory
|
MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66 16M X 16 DDR DRAM, 0.7 ns, PBGA60 Double Data Rate (DDR) SDRAM
|
Micron Technology
|
MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15 |
64M X 4 DDR DRAM, 1.5 ns, PBGA78 32M X 8 DDR DRAM, 1.87 ns, PBGA78 32M X 8 DDR DRAM, 1.5 ns, PBGA78
|
|
DU5162ETR-FAC DU5162ETR-E3C H5DU5182ETR-E3C |
32M X 16 DDR DRAM, 0.65 ns, PDSO66 32M X 16 DDR DRAM, 0.75 ns, PDSO66 64M X 8 DDR DRAM, 0.75 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
HY5DU121622DTP-D43I |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|
W3E32M72SR-250SBC |
32M X 72 DDR DRAM, 0.8 ns, PBGA208
|
MICROSEMI CORP-PMG MICROELECTRONICS
|