PART |
Description |
Maker |
K4H511638D K4H510438D |
(K4H51xx38D) 512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_ |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
K4H510838B-VC_LCC K4H510838B-N K4H510838B-NC_LA2 K |
512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil)
|
SAMSUNG[Samsung semiconductor]
|
HYS64D64020GU-7-B HYS64D64320GU-5-B HYS64D64320GU- |
DDR SDRAM Modules - 512MB (64Mx64) PC2100 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank DDR SDRAM Modules - 512MB (32Mx72) PC2100 2-bank DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank 184-Pin Unbuffered Dual-In-Line Memory Modules DDR SDRAM Modules - 256MB (32Mx64) PC2100 1-bank DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC3200 2-bank
|
Infineon
|
M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HYS72D128021GR-7-B HYS72D64020GR-8-B HYS72D128020G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank DDR SDRAM Modules - 256MB (32Mx72) PC1600 1-bank DDR SDRAM Modules - 512MB (64Mx72) PC1600 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC1600 2-bank DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-bank 2.5 V 184-pin Registered DDR-I SDRAM Modules
|
INFINEON[Infineon Technologies AG]
|
W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA) 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
K4T51043Q K4T51043QB-GCCC K4T51043QB-GCD5 K4T51043 |
512Mb B-die DDR2 SDRAM
|
Samsung semiconductor
|