| PART |
Description |
Maker |
| PALC22V10D-15JC PALC22V10D-15JI PALC22V10D-25DMB P |
From old datasheet system
Flash Erasable, Reprogrammable CMOS PAL㈢ Device
Flash Erasable, Reprogrammable CMOS PAL垄莽 Device
Flash Erasable, Reprogrammable CMOS PAL庐 Device
Flash Erasable, Reprogrammable CMOS PAL? Device
|
Cypress Semiconductor
|
| CY7C263-20JC CY7C263-20PC CY7C263-20WC CY7C263-55P |
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 OTPROM, 45 ns, PDIP24
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 OTPROM, 20 ns, PDIP24
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 UVPROM, 35 ns, CDIP24
8K x 8 Power-Switched and Reprogrammable PROM 8K X 8 OTPROM, 35 ns, PDIP24
Memory : PROMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| PY264 PY264-45PM PY264-45PMB PY264-55PMB PY264-35P |
8K X 8 REPROGRAMMABLE PROM 8K的8可重复编程胎膜早
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 45 ns, CDIP24
8K X 8 REPROGRAMMABLE PROM 8K X 8 UVPROM, 55 ns, CDIP24
|
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28
CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| M27C1024-35C1 M27C1024-90C1 M27C1024-12C6 M27C1024 |
64K X 16 OTPROM, 100 ns, PDSO40
64K X 16 OTPROM, 100 ns, PQCC44
64K X 16 OTPROM, 100 ns, PDIP40
64K X 16 UVPROM, 100 ns, CDIP40
64K X 16 UVPROM, 45 ns, CDIP40
1 MBIT (64KB X16) UV EPROM AND OTP EPROM
|
STMICROELECTRONICS
ST Microelectronics
|
| M5L2764K M5L2764K-2 |
65536 Bit Erasable and Electrically Reprogrammable ROM
65536-BIT (8192-WORD BY 8-BIT) ERASABLE AND ELECTRICALLT REPROGRAMMABLE ROM
|
Mitsubishi Electric Semiconductor
|
| PALCE20V8 PAL20V8 CE20V8 PALCE20V8L-25QI PALCE20V8 |
Flash Erasable/ Reprogrammable CMOS PAL Device
Flash Erasable,Reprogrammable CMOS PAL Device
Flash Erasable, Reprogrammable CMOS PAL Device
From old datasheet system
|
CYPRESS[Cypress Semiconductor]
|
| IS61NLP6B436A-200TQBI IS61NVP6B436A-200TQBI IS61NL |
64K x 32, 64K x 36, and 128K x 18 2Mb, PIPELINE (NO WAIT) STATE BUS SRAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| IBM041813PPLB |
64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝发流水线式线式高性能静态RAM) 64K的X管道18的SRAM00万（64K的X 18）同步可猝发流水线式线式高性能静态内存）
|
International Business Machines, Corp.
|
| W29N102C |
64K×16bit CMOS 3.3V Flash Memory(64K×16位以3.3V电源供电的CMOS闪速存储器)
|
Winbond Electronics Corp
|
| IS61C6416AL-12TI-TR IS64C6416AL-15TLA3 IS65C6416AL |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
64K x 16 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
List of Unclassifed Manufac...
|
| KM616V1002CI |
64K x 16 Bit High-Speed CMOS Static RAM(3.3V Operating)(64K x 16 位高速CMOS 静RAM(3.3V 工作))
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
