PART |
Description |
Maker |
UPD424260AL |
3.3V Operation 4M-Bit DRAM
|
NEC Electronics
|
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns 1M x 4 Bit EDO DRAM 3.3 V 60 ns -1M x 4-Bit Dynamic RAM 1M x 4 Bit EDO DRAM 3.3 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 |
Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
|
ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
|
MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位)2兆位米16位).0伏的CMOS只,同时作业闪存,和 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc. Xilinx, Inc. Spansion, Inc.
|
HYM641020GS-70 HYM641020GS-60 HYM641010GS-70 HYM64 |
1M x 64 Bit DRAM Module buffered 1M x 64-Bit Dynamic RAM Module 1M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
|
AM49PDL640AG70N AM49PDL640AG70NT AM49PDL640AGA70NS |
Simultaneous Operation Flash Memory And 16Mbit (1M X16-Bit) Pseudo Static RAM 64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
|
AMD SPANSION[SPANSION]
|
HYM324020GS-70 HYM324020S-70 Q67100-Q980 Q67100-Q2 |
4M x 32 Bit DRAM Module 4M x 32-Bit Dynamic RAM Module 4M X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
|
AM41PDS3228DT10IS AM41PDS3228DB10IT AM41PDS3228DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
|
AM29DL800BB120SF AM29DL800BB70SF AM29DL800BB90SF A |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只,同时作业快闪记忆
|
Advanced Micro Devices, Inc.
|