| PART |
Description |
Maker |
| MT46H32M16 |
Mobile Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
| MT46V8M16 MT46V32M4 MT46V16M8 |
DOUBLE DATA RATE DDR SDRAM
DOUBLE DATA RATE DDR SDRAM 双倍数据速率的DDR SDRAM内存
|
MICRON[Micron Technology]
Micron Technology, Inc.
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HYB25D512160BC-6 HYB25D512800BC-6 |
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
512-Mbit Double-Data-Rate SDRAM 64M X 8 DDR DRAM, 0.7 ns, PBGA60
|
Qimonda AG
|
| W9412G6JH W9412G6JH-5 |
2M ?4 BANKS ?16 BITS DDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
|
Winbond
|
| MT46V2M32V1 MT46V2M32LG |
DOUBLE DATA RATE DDR SDRAM
|
MICRON[Micron Technology]
|
| HYB25D256160CC-5 HYB25D256160CT-5 HYB25D256160CT-6 |
256Mbit Double Data Rate (DDR) Components
|
Infineon
|
| HYB25D512400BC-5 HYB25D512160BC-5 HYB25D512400BT-6 |
512Mbit Double Data Rate (DDR) Components
|
Infineon
|
| MT46V64M16 |
(MT46Vxxx) DOUBLE DATA RATE DDR SDRAM
|
Micron Technology
|
| GS8170DD18GC-333IT GS8170DD18C-333I GS8170DD18C-25 |
333MHz 1M x 18 18MB double data rate sigmaRAM SRAM
300MHz 1M x 18 18MB double data rate sigmaRAM SRAM
250MHz 1M x 18 18MB double data rate sigmaRAM SRAM
1M X 18 STANDARD SRAM, 1.6 ns, PBGA209
|
GSI TECHNOLOGY
|
