| PART |
Description |
Maker |
| FAP-450 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五（巴西）直|4A条（丁）|47VAR
N-channel MOS-FET(500V, 0,38Ω, 14A, 190W)
N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
TOKO, Inc.
Fuji Electric
|
| RJK5026DPP-E0 RJK5026DPP-E0-15 RJK5026DPP-E0T2 RJK |
500V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5032DPD |
500V - 3A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5012DPP-E0T2 RJK5012DPP-E0-15 |
500V - 12A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| IRFP450 |
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| IRFP450R |
Trans MOSFET N-CH 500V 14A 3-Pin(3 Tab) TO-247AD
|
New Jersey Semiconductors
|
| IRFP450LC |
Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A)
|
IRF[International Rectifier]
|
| APT5020BN APT5022BN |
POWER MOS IV 500V 28.0A 0.20 Ohm / 500V 27.0A 0.22 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT5025BN APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT5026HVR |
POWER MOS V 500V 18.5A 0.260 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5012 APT5012WVR |
POWER MOS V 500V 40A 0.120 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
