PART |
Description |
Maker |
WDP10S60 |
10A,600V Ultrafast Single Diode
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
IRGBC20SD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
IRG4BC20SD |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
|
IRF[International Rectifier]
|
SGW10N60 SGW10N60A SGB10N60A SGP10N60A |
Fast IGBT in NPT-technology IGBTs & DuoPacks - 10A 600V TO220AB IGBT IGBTs & DuoPacks - 10A 600V TO263AB SMD IGBT IGBTs & DuoPacks - 10A 600V TO247AC IGBT
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
SF10D300D2 |
300V, 10A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
SF10A300HPI |
300V, 10A ULTRAFAST DUAL RECTIFIERS
|
KODENSHI KOREA CORP.
|
FFAF60UA60DN |
60A, 600V, Ultrafast Dual Diode 60 A, 600 V, Ultrafast ll Dual Diode
|
Fairchild Semiconductor
|
UF1008FCT UF1000FCT UF1000FCT_06 UF1001FCT UF1002F |
10A GLASS PASSIVATED DUAL ULTRAFAST RECTIFIER
|
WTE[Won-Top Electronics]
|
IRG4BC10UD IRG4BC10UDPBF |
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging 1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging 10-Bit D-Type Latch 600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器 8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
MSICSN10060CA MSICSN10060CC MSICSN10060D MSICSS100 |
10A / 600V Silicon Carbide Dual Schottky Rectifier
|
Microsemi Corporation
|
MUR860 MUR840 FN2091 RURP860 RURP840 |
8A, 400V - 600V Ultrafast Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC From old datasheet system 8A/ 400V - 600V Ultrafast Diodes
|
Intersil, Corp. INTERSIL[Intersil Corporation]
|