PART |
Description |
Maker |
AM29BDD160GT54DKI AM29BDD160GB64CKI AM29BDD160GB65 |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 64 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 67 ns, PQFP80 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪 16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, PBGA80
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Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
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M41000002M M41000002R M41000002W AM41DL3228GB30IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
|
AMD[Advanced Micro Devices]
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AM41DL3248GB85IT AM41DL3238GB85IT AM41DL3238GT85IS |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
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Advanced Micro Devices, Inc. SPANSION LLC
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AM29BDD160GB17CPBE AM29BDD160GB17CPBF AM29BDD160GB |
16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16兆位 M中的x 16-bit/512亩32位).5伏的CMOS只突发模式,双启动,同步写闪
|
Advanced Micro Devices, Inc.
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S29CD016G0JFAI013 S29CD016G0J S29CD016G S29CD016G0 |
16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory
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SPANSION[SPANSION]
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LH28F800BGH-L LH28F800BGR-TL85 LH28F800BGR-TL12 LH |
Aluminum Polymer Radial Lead Capacitor; Capacitance: 1800uF; Voltage: 4V; Case Size: 8x12 mm; Packaging: Bulk 8 M位(512 KB的16)SmartVoltage闪存 RES CURRENT SENSE .025 OHM 1W 1% 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
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http:// Sharp, Corp. Sharp Corporation Sharp Electrionic Compo...
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S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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SPANSION LLC
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LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
|
Sharp Corporation Sharp, Corp.
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S29AL008D55TFN023 S29AL008D70TFN023 S29AL008D70TFI |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44 CONNECTOR ACCESSORY 连接器附 CONNECTOR ACCESSORY 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO44 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 512K X 16 FLASH 3V PROM, 55 ns, PBGA48 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位).0伏的CMOS只引导扇区闪 JT 16C 16#16 PIN RECP CAP 0.015UF 50V 80-20% Z5U SMD-0805 TR-7-PL SN-NIBAR SSR OCMOS FET 200MA NO 6-SOIC
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SPANSION LLC Spansion, Inc. Spansion Inc.
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FM93C56EM8 FM93C56LMT8 FM93CS56LMT8 FM93CS56LEM8 F |
(MICROWIRE??Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read RES, 0603, SMD, 0.1%, TKF 11.8K (MICROWIREBus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read 2048-Bit Serial CMOS EEPROM With Data Protect and Sequential Read(带连续读操作和数据保护的2048位串行CMOS EEPROM) (MICROWIRE?/a> Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read (MICROWIRE Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read (MICROWIRE?Bus Interface) 2048-Bit Serial EEPROM with Data Protect and Sequential Read
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Fairchild Semiconductor Corporation
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MCM7643 MCM7643A MCM7643ADC MCM7643APC MCM7643DC M |
V(cc): 7.0V; 650mA; 4096-bit programmable read only memory 4096 BIT PROGRAMMABLE READ ONLY MEMORIES
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Motorola, Inc
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