| PART |
Description |
Maker |
| RJH1CM6DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| FGA20S120M |
1200V, 20A Shorted-Anode IGBT
|
Fairchild Semiconductor
|
| RJH1CM6DPQ-E013 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CM6DPQ-E0-15 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| IRGPH40S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| MBRA100 MBRA130 MBRA140 MBRA120 MBRA180 |
SURFACE MOUNT SCHOTTK Y BARRIER RECTIFIER
|
Shenzhen Taychipst Electronic Co., Ltd
|
| APT12060LVR APT12060B2VR |
POWER MOS V 1200V 20A 0.600 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| CRNA20-1000 |
DIODE RECT 1000V 20A ISO TO220AB 12.7 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
|
Crydom, Inc.
|
| N457 |
的ISO / IEC裕廊1/SIC 2/WG 3 7位和8位代码和扩展秘书处：埃洛
ISO/IEC JTC 1/SIC 2/WG 3 7-bit and 8-bit codes and their extension SECRETARIAT : ELOT
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
ETC
|
| RURG50120 FN3740 |
50A, 1200V Ultrafast Diode(50A, 1200V 瓒?揩??????)
50A, 1200V Ultrafast Diode(50A, 1200V 超快速二极管) 50 A, 1200 V, SILICON, RECTIFIER DIODE
50A 1200V Ultrafast Diode
From old datasheet system
|
HARRIS SEMICONDUCTOR
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| HGTG20N100D2 |
20A, 1000V N-Channel IGBT 34 A, 1000 V, N-CHANNEL IGBT, TO-247
20A/ 1000V N-Channel IGBT
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 30FWJ2CZ47M |
SCHOTTKY BARRIER TYPE (LOW FORWARD VOLTAGE SCHOTTK BARRIER)
|
TOSHIBA[Toshiba Semiconductor]
|
