PART |
Description |
Maker |
K4S560832D-NCL7C |
8M x 8bit x 4 banks synchronous DRAM LVTTL, 133MHz
|
Samsung Electronic
|
K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
W986408CH-8H W986408CH-75 W986408CH |
2M x 8BIT x 4 BANKS SDRAM x8 SDRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http:// Winbond Electronics, Corp. Winbond Electronics Corp
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
KM48S16030A KM48S16030AT-G_F10 KM48S16030AT-G_FA K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Electronic Theatre Controls, Inc. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MT48LC4M16A2B4-6AITJ MT48LC4M16A2B4-75 MT48LC4M16A |
SDR SDRAM MT48LC16M4A2 ?4 Meg x 4 x 4 Banks MT48LC8M8A2 ?2 Meg x 8 x 4 Banks MT48LC4M16A2 ?1 Meg x 16 x 4 Banks
|
Micron Technology
|
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz 128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz 4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
|
HYNIX[Hynix Semiconductor]
|
MT46H16M16LFBF-6ITH MT46H8M32LGB5-75ITA |
Mobile DDR SDRAM MT46H16M16LF ?4 Meg x 16 x 4 banks MT46H8M32LF/LG ?2 Meg x 32 x 4 banks 8M X 32 DDR DRAM, 6 ns, PBGA90
|
Micron Technology
|
K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4 |
8M X 8 EDO DRAM, 45 ns, PDSO32 8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输 (K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C |
8M x 8bit CMOS dynamic RAM with extended data out, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 60ns 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|