| PART |
Description |
Maker |
| 1N914UR JANTXV1N914UR |
Signal or Computer Diode; Package: DO-213AA; IO (A): 0.075; Cj (pF): 4; Vrwm (V): 75; trr (nsec): 5; VF (V): 0.8; IR (µA): 0.5; 0.075 A, SILICON, SIGNAL DIODE
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| AS8S128K32Q1-35_883C AS8S128K32Q1-35_IT AS8S128K32 |
128K x 32 SRAM SRAM MEMORY ARRAY
128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 1.075 X 1.075 INCH, 0.195 INCH HEIGHT, CERAMIC, PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 0.140 INCH HEIGHT, CERAMIC, QFP-68
|
http://
Austin Semiconductor, Inc
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| 1812R-562J 1812R-184J 1812-181K 1812-561K 1812R-22 |
INDUCTOR UNSHIELDED 5.6UH SMD 1 ELEMENT, 5.6 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR UNSHIELDED 180UH SMD 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
COIL .18UH UNSHIELDED SMD 1 ELEMENT, 0.18 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
COIL .56UH UNSHIELDED SMD 1 ELEMENT, 0.56 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
COIL .22UH UNSHIELDED SMD 1 ELEMENT, 0.22 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
INDUCTOR UNSHIELDED 470UH SMD 1 ELEMENT, 470 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
API Delevan
|
| 1410454 1410460 1410478 1410516 1410517 1410524 14 |
Bobbin Type Inductors
SPACER,.25L,.125 O.D,.047 I.D.
Unshielded Surface Mount Inductors 1 ELEMENT, 15000 uH, GENERAL PURPOSE INDUCTOR
LED MOUNT, RIGHT ANGLE 2 LEAD FOR T 1-3/4 NYLON NATURAL 1 ELEMENT, 10 uH, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 470 uH, GENERAL PURPOSE INDUCTOR
LED MOUNT, RIGHT ANGLE 2 LEAD FOR T 1-3/4 NYLON NATURAL 1 ELEMENT, 100 uH, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 22000 uH, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 220 uH, GENERAL PURPOSE INDUCTOR
CAP 2.2UF 450V FILM BOX TYPE 10% 1 ELEMENT, 6800 uH, GENERAL PURPOSE INDUCTOR
Unshielded Surface Mount Inductors 1 ELEMENT, 6800 uH, GENERAL PURPOSE INDUCTOR
LED MOUNT, T1-3/4, FLUSH MNT, NYLON, NATURAL COLOR
SPACER,NYLON ROUND
|
C&D TECHNOLOGIES INC
CANDD[C&D Technologies]
|
| 1N5712UBCC |
0.075 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
MICROSEMI CORP-LAWRENCE
|
| BAT46-A |
0.075 A, 100 V, SILICON, RECTIFIER DIODE, DO-35
|
DIODES INC
|
| NFA2ASN807AB4B |
4 FUNCTIONS, 0.075 A, DATA LINE FILTER
|
MURATA MANUFACTURING CO LTD
|
| BUZ101SL-4 |
Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
|
| STC08DE150 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR - ESBT" 1500 V - 8 A - 0.075 Ohm
|
ST Microelectronics
|
| SPD30P06P-E4-E6327 |
30 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252 ROHS COMPLIANT PACKAGE-3
|
Infineon Technologies AG
|
|
