| PART |
Description |
Maker |
| IS43DR16160A-37CBL |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| EDR2518ABSE-8C EDR2518ABSE-8C-E EDR2518ABSE-AD-E E |
CHOKE RF HI CURRENT 150UH 10%
Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No
288M bits Direct Rambus DRAM 16M X 18 DIRECT RAMBUS DRAM, PBGA80
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| MC-4R512FKK8K MC-4R512FKK8K-840 |
512MB 32-bit Direct Rambus DRAM RIMM Module 256M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| KMM366F1600BK2 KMM366F1680BK2 |
16M x 64 DRAM DIMM(16M x 64 动RAM模块)
16M x 64 DRAM DIMM(16M x 64 ?ㄦ?RAM妯″?)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| M366S1723CTS |
16M x 64 SDRAM DIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| MC-4R128CPE6C-845 MC-4R128CPE6C MC-4R128CPE6C-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 45 ns, DMA184 RIMM-184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
Performance Semiconductor, Corp.
NEC Corp.
NEC[NEC]
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
