| PART |
Description |
Maker |
| MCM6294J20R2 |
16K X 4 CACHE TAG SRAM, 10 ns, PDSO28
|
MOTOROLA INC
|
| P4C214-17PP52C |
16K X 16 CACHE SRAM, 17 ns, PQCC52 PLASTIC, LCC-52
|
Performance Semiconductor, Corp.
|
| IS61LPD25636T-166TQI IS61LPD25636J-166B IS61LPD512 |
256K X 36 CACHE SRAM, 3.5 ns, PQFP100 TQFP-100
256K X 36 CACHE SRAM, 3.5 ns, PBGA119
512K X 18 CACHE SRAM, 2.8 ns, PBGA119
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| IS61VF102418A-6.5B2 IS61VF10241A-7.5B2I |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA119
1M X 18 CACHE SRAM, 7.5 ns, PBGA119
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2 |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑
512K X 8 CACHE SRAM, 15 ns, PDSO36
512K X 8 CACHE SRAM, 20 ns, PDSO36
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
Aeroflex Circuit Techno...
|
| IDT6167 IDT6167LA IDT6167LA100D IDT6167LA100DB IDT |
CMOS STATIC RAM 16K (16K x 1-BIT) 16K的的CMOS静态RAM6K的1位）
CABLE SMA/BNC 24 RG-142 16K的的CMOS静态RAM6K的1位）
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC -40 to 85 16K的的CMOS静态RAM6K的1位）
Enhanced-JFET Precision Dual Operational Amplifier 8-PDIP -40 to 85 16K的的CMOS静态RAM6K的1位）
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, PDSO20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 25 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, CDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 15 ns, PDIP20
CMOS STATIC RAM 16K (16K x 1-BIT) 16K X 1 STANDARD SRAM, 45 ns, CDIP20
CABLE SMA/BNC 36 RG-142
Enhanced-JFET Precision Dual Operational Amplifier 8-SOIC 0 to 70
Quad Enhanced JFET Precision Operational Amplifier 14-SOIC 0 to 70
16K X 1 STANDARD SRAM, 70 ns, PDSO20
|
Integrated Device Techn...
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| AS5SP1M18DQ AS5SP1M18DQ-30ET AS5SP1M18DQ-30IT AS5S |
1M X 18 CACHE SRAM, 3.5 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100
1M X 18 CACHE SRAM, 4 ns, PQFP100 14 X 20 MM, MS-026-D/BHA, TQFP-100
Plastic Encapsulated Microcircuit 18Mb, 1M x 18, Synchronous SRAM Pipeline Burst, Single Cycle Deselect
|
Austin Semiconductor, Inc
Micross Components
|
| CY7C1481V33-133BZXI CY7C1481V33-133AXI CY7C1481V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| IDT6198L IDT6198L15D IDT6198L15DB IDT6198L15L IDT6 |
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control 16K X 4 STANDARD SRAM, 70 ns, CQCC28
LED PNL MT 9MM 6V BLACK GREEN 64K的的CMOS静态RAM6K的4位带输出）控
CABLE SMA/SMA 24 RG-142 64K的的CMOS静态RAM6K的4位带输出）控
CMOS STATIC RAM 64K (16K x 4-BIT) with Output Control 16K X 4 STANDARD SRAM, 25 ns, CDIP24
Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-TSSOP 0 to 70 64K的的CMOS静态RAM6K的4位带输出）控
|
Integrated Device Techn...
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
INTEGRATED DEVICE TECHNOLOGY INC
|
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