PART |
Description |
Maker |
EBD11ED8ADFB-5C EBD11ED8ADFB-5 EBD11ED8ADFB-5B EBD |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 1GB Unbuffered DDR SDRAM DIMM (128M words x72 bits, 2 Ranks)
|
ELPIDA MEMORY INC Elpida Memory, Inc. ELPIDA[Elpida Memory]
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HMT112U6AFP8C-G7 HMT112U6AFP8C-G8 HMT112U6AFP8C-H8 |
240pin DDR3 SDRAM Unbuffered DIMMs 64M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 128M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 256M X 72 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, UDIMM-204 128M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 128M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 256M X 64 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240 256M X 72 DDR DRAM MODULE, DMA240 LEAD FREE, DIMM-240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
M395T2863QZ4-CE65 M395T2863QZ4-CE68 M395T2863QZ4-C |
128M X 72 DDR DRAM MODULE, DMA240 HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 512M X 72 DDR DRAM MODULE, DMA240
|
BCD Semiconductor Manufacturing, Ltd.
|
MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100 128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100 64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
HYMD512646AL8-H HYMD512646AL8-K HYMD512646A8-H HYM |
Unbuffered DDR SDRAM DIMM 128M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HB54R1G9F2U-B75B HB54R1G9F2U HB54R1G9F2U-10B HB54R |
1GB Registered DDR SDRAM DIMM 128M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
EBJ11ED8CAFA-DJ-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
HYMP512U64CP8-S6 |
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240
|
HYNIX SEMICONDUCTOR INC
|
NT1GT72U4PB0BV-25D |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
NANYA TECHNOLOGY CORP
|
HYS72T128320HP-3.7-B |
128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
QIMONDA AG
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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