| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| CGH40006S |
C BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
CREE INC
|
| TGM2635-CP |
X-Band 100 W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGA2579-FL TGA2579-FL-15 |
25 Watt Ku-Band GaN Power Amplifier
|
TriQuint Semiconductor
|
| RF3933 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| RFHA1020 |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| FLM1011-6F |
KU BAND, GaAs, N-CHANNEL, RF POWER, JFET
X, Ku-Band Internally Matched FET
|
Eudyna Devices Inc
|
| CM4208A2 |
SCR/Diode POW-R-BLOK Modules 25 Amperes/800 Volts
SCR/Diode POW-R-BLOK⑩ Modules 25 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
