| PART |
Description |
Maker |
| SRP1206-R47Y SRP1206-R60Y |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - High Current Power Inductors 1 ELEMENT, 0.9 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| BDP948 BDP950 Q62702-D1338 Q62702-D1336 |
From old datasheet system
PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
SIEMENS A G
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| SRP1270-1R8M SRP1270-8R2M |
1 ELEMENT, 1.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD ROHS COMPLIANT
MAGNETICS - High Current Power Inductors 1 ELEMENT, 8.2 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| BCP68 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., L...
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| FS1UM-18A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| HS-1410RH 5962F9851801VXC HS9-1410RH-Q |
Radiation Hardened/ High Speed/ Low Power/ Current Feedback Op Amp with Output Disable
CAP 4-ARRAY 47000PF 16V X7R 1206
Radiation Hardened, High Speed, Low
Power, Current Feedback Op Amp with
Output Disable(抗辐射高速、低功耗电流反馈放大器（输出禁止）)
Radiation Hardened, High Speed, Low Power, Current Feedback Op Amp with Output Disable OP-AMP, PDFP10
|
Intersil Corporation
Intersil, Corp.
|
| SDR0805-2R5M SDR0805-100M SDR0805-120M BOURNSINC-S |
MAGNETICS - NON-SHIELDED POWER INDUCTOR 1 ELEMENT, 2.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductors 10uH 7.8mm SMD
Inductor; Inductor Type:Power; Inductance:12uH; Inductance Tolerance: 20 %; Current Rating:3A; Series:SDR0805; Core Material:Ferrite DR; Leaded Process Compatible:No; Mounting Type:Surface Mount; Operating Temp. Min:-40 C RoHS Compliant: No
|
Bourns, Inc.
BOURNS INC
|
| BC808-16 BC808-25 BC808-40 Q62702-C1689 BC807 BC80 |
From old datasheet system
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= -40 to 85 C; Package: PTQP0100KA-A
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 500 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Silicon AF Transistors (For general AF applications High collector current High current gain) 进步党硅晶体管自动对焦（自动对焦对于一般应用高集电极电流的高电流增益）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Fairchild Semiconductor, Corp.
|
