| PART |
Description |
Maker |
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| 1SMA33AT3 1SMA70AT3 1SMA70AT3G 1SMA9.0AT3 1SMA9.0A |
400 Watt Peak Power Zener Transient Voltage Suppressors 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
| P4SMA110A P4SMA91A P4SMA8.2 P4SMA8.2A P4SMA150 P4S |
400 Watts Suface Mount Transient Voltage Suppressor
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
|
Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Compan...
Taiwan Semiconductor Co...
|
| SDA188DECAUF SDA188DECAUFS SDA188DECAUFTX SDA188DE |
50 Amps Centertap Ultra Fast Rectifier Assembly 400 - 900 Volts
50 A, 400 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc
http://
SOLID STATE DEVICES INC
Solid States Devices, I...
|
| SDR4N SDR4J SDR4G |
3 AMP 400-1200 50-80nsec ULTRA FAST RECTIFIER 3 A, 400 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| P4KE11 P4KE10 P4KE100 P4KE20 P4KE27 P4KE33 P4KE180 |
GPP TRANSIENT VOLTAGE SUPPRESSOR (400 WATT PEAK POWER 1.0 WATT STEADY STATE) 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
|
RECTRON[Rectron Semiconductor]
|
| MJE1300906 MJE13009G MJE13009 |
SWITCHMODE Series NPN Silicon Power Transistors(开关模式系列NPN硅功率晶体管) 12 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 100 WATTS
|
ONSEMI[ON Semiconductor]
|
| SM12CXC220 SM34CXC614 SM36CXC604 SM38CXC624 SM38CX |
860 A, 1200 V, SILICON, RECTIFIER DIODE
1160 A, 3400 V, SILICON, RECTIFIER DIODE
1010 A, 3600 V, SILICON, RECTIFIER DIODE
1106 A, 3800 V, SILICON, RECTIFIER DIODE
2640 A, 3800 V, SILICON, RECTIFIER DIODE
1106 A, 3400 V, SILICON, RECTIFIER DIODE
435 A, 1500 V, SILICON, RECTIFIER DIODE
440 A, 600 V, SILICON, RECTIFIER DIODE
1160 A, 3800 V, SILICON, RECTIFIER DIODE
1160 A, 4200 V, SILICON, RECTIFIER DIODE
940 A, 800 V, SILICON, RECTIFIER DIODE
940 A, 1800 V, SILICON, RECTIFIER DIODE
940 A, 400 V, SILICON, RECTIFIER DIODE
940 A, 1000 V, SILICON, RECTIFIER DIODE
940 A, 600 V, SILICON, RECTIFIER DIODE
940 A, 1600 V, SILICON, RECTIFIER DIODE
1106 A, 4000 V, SILICON, RECTIFIER DIODE
310 A, 2600 V, SILICON, RECTIFIER DIODE
370 A, 2600 V, SILICON, RECTIFIER DIODE
2700 A, 2600 V, SILICON, RECTIFIER DIODE
860 A, 1400 V, SILICON, RECTIFIER DIODE
440 A, 400 V, SILICON, RECTIFIER DIODE
440 A, 800 V, SILICON, RECTIFIER DIODE
435 A, 1600 V, SILICON, RECTIFIER DIODE
435 A, 1800 V, SILICON, RECTIFIER DIODE
527 A, 3200 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| BZW04-256-E3/73 BZW04-28B-E3/4 |
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
|
VISHAY SEMICONDUCTORS
|
| 1SMA24AT3 1SMA70AT3 1SMA40AT3 1SMA5.0AT3 1SMA6.0AT |
Zener Transient Voltage Suppressors 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
PT 1.5/ 4-3.5-H
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.08 VOLTS VR 400 WATTS PEAK POWER
From old datasheet system
|
ON Semiconductor
Motorola Mobility Holdings, Inc.
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BYP60A05 BYP60A1 BYP60A2 BYP60A3 BYP60A4 BYP60A5 B |
Silicon Press-Fit-Diodes 60 A, 400 V, SILICON, RECTIFIER DIODE
|
Semikron International
|
| 1N821 1N823 1N829A 1N821A 1N823A 1N825 1N825A 1N82 |
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V/ 400 mW
TRANSF 5VAC 2.4A SPLIT PACK
TRANSF 1.75 OHM DUAL GATE DRIVE
TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-204AH
Bobbins Transformer; Supply Voltage:230V; Power Rating:12VA; Mounting Type:PCB Surface; Approval Bodies:cURus; External Depth:1.875"; External Height:1.438"; External Width:1.563"; Frequency:60GHz; Leaded Process Compatible:Yes
|
MOTOROLA[Motorola, Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
|
