| PART |
Description |
Maker |
| FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C)
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Infineon Technologies AG
|
| BSM25GAL100D BSM25GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 25A I(C)
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 25A I(C)
|
|
| OMD60L60FL OMD150N06FL |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五（巴西）国际消费电子展| 75A条一c
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
|
Unisonic Technologies Co., Ltd.
|
| MG600J2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
| VDI125-12S4 VII125-12S4 VID125-12S4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展| 125A条一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 125A条一（c
|
IXYS, Corp.
|
| 1MBI600LP060 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 600A I(C)
|
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| 7MBP10PE120 7MBR10PE120 |
IGBT module (S series)
IGBT Module(Power Integrated Module)
|
FUJI[Fuji Electric]
|
| IRGRDN400M12 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
Diodes, Inc.
|
| GP300LSS16S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|独立| 1.6KV五（巴西）国际消费电子展| 300我（丙）
|
TE Connectivity, Ltd.
|
| 2MBI100J120 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 100号A一c
|
Samsung Semiconductor Co., Ltd.
|
| IEF21KA1 |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 15A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1KV交五（巴西）国际消费电子展|5A一（c
|
TE Connectivity, Ltd.
|
