| PART |
Description |
Maker |
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| 2SD2098 |
NPN Silicon Epitaxial Planar Tra nsistor
|
SeCoS Halbleitertechnologie GmbH
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2SA1698 |
0.07 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Panasonic, Corp.
|
| 2SA1107 |
Silicon PNP Power Transistors MT-200 package
|
Savantic
|
| PMBT3946YPN |
40 V, 200 mA NPN/PNP general-purpose double transistor
40 V, 200 mA NPN-PNP general-purpose double transistor 200 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| 2N23867 |
1.000W Power PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE.
|
Continental Device India Limited
|
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| MMST39062 MMST3906-7-F |
PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
TRANS PNP BIPOLAR 40V SOT323 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Diodes Incorporated
Diodes, Inc.
|
| 2N3906-AP |
TRANSISTOR PNP GP 40V TO92 200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Micro Commercial Components, Corp.
|
| LMN200B021 LMN200B02 |
200 mA LOAD SWITCH PRE-BIASED PNP TRANSISTOR AND N-MOSFET WITH GATE PULL DOWN RESISTOR
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
|
Diodes Incorporated
|
