| PART |
Description |
Maker |
| SRP1204-1R8M BOURNSINC-SRP1204-1R8M |
MAGNETICS - High Current Power Inductors 1 ELEMENT, 2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns, Inc.
|
| BDP947 BDP949 Q62702-D1337 Q62702-D1335 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BDP951 BDP955 BDP953 Q62702-D1343 Q62702-D1339 Q62 |
NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) NPN硅自动对焦功率晶体管输出级驱动器和高集电极电流高电流增益（为自动
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BCP68 |
High current. Three current gain selections. 1.4 W total power dissipation.
|
TY Semiconductor Co., L...
|
| MG600Q1US41 E002366 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
From old datasheet system
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BUX81 |
HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR
|
Seme LAB
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| SDR2207-820KL SDR2207-180YL SDR2207-181KL SDR2207- |
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 82 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 680 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 56 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
MAGNETICS - NON-SHIELDED POWER INDUCT-LF 1 ELEMENT, 390 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
SMD Power Inductors
|
Bourns, Inc.
Bourns Electronic Solutions
|
| HM62V8512B HM62V8512BLFP-7 HM62V8512BLFP-7SL HM62V |
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
Quadruple Bus Buffer Gate With 3-State Outputs 14-PDIP -40 to 85
4 M SRAM (512-kword x 8-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| SDR0805-2R5M SDR0805-100M SDR0805-120M BOURNSINC-S |
MAGNETICS - NON-SHIELDED POWER INDUCTOR 1 ELEMENT, 2.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
Power Inductors 10uH 7.8mm SMD
Inductor; Inductor Type:Power; Inductance:12uH; Inductance Tolerance: 20 %; Current Rating:3A; Series:SDR0805; Core Material:Ferrite DR; Leaded Process Compatible:No; Mounting Type:Surface Mount; Operating Temp. Min:-40 C RoHS Compliant: No
|
Bourns, Inc.
BOURNS INC
|
