| PART |
Description |
Maker |
| BUZ21 BUZ21SMD |
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.085 Ohm, 21A, NL
Power MOSFET, 100V,D²PAK , RDSon=0.085 Ohm, 21A, NL
SIPMOS Power Transistor
|
Infineon Technologies AG
|
| UT2309L-AE3-R |
3.7 A, 30 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
|
| IRFP250 FN2330 |
33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
From old datasheet system
|
Intersil
|
| BUZ71 |
N-CHANNEL 50V - 0.085 OHM - 17A TO-220 STRIPFET POWER MOSFET
|
ST Microelectronics
|
| STW33N20 |
33 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
STMICROELECTRONICS
ST Microelectronics
|
| MTD15N06VL MTD15N06VL_D ON2469 MTD15N06 |
From old datasheet system
TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM
|
MOTOROLA[Motorola, Inc]
ON Semi
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| APT30M85BVR APT30M85 |
POWER MOS V 300V 40A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT50M85JVFR |
POWER MOS V 500V 50A 0.085 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| ITE08C06 ITE08F06 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-247AA
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-220AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展| 8A条一（c）| TO - 220AB现有
|
Continental Device India, Ltd.
|
| OM6559SP1 OM6558SP1 OM6545SP1 |
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 25A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展|5A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 21A I(C) | SIP 晶体管| IGBT的|正陈| 1KV交五（巴西）国际消费电子展| 21A条（c）的|园区
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 49A I(C) | SIP 晶体管| IGBT的|正陈| 500V五（巴西）国际消费电子展|9A一（c）|园区
|
Electronic Theatre Controls, Inc.
OKI SEMICONDUCTOR CO., LTD.
|
