| PART |
Description |
Maker |
| M2V64S2DTP-6 M2V64S2DTP-7 M2V64S2DTP-8 M2V64S4DTP- |
64M Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M2V64S20DTP-6L M2V64S30DTP-6L M2V64S40DTP-6L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M2V64S20DTP-7L M2V64S30DTP-7L M2V64S40DTP-8L M2V64 |
64M Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M378B6573EZ0-CG8 |
64M X 64 SYNCHRONOUS DRAM MODULE, DMA240
|
|
| HYM72V64736T8-H |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
HYNIX SEMICONDUCTOR INC
|
| MT18LSDT6472AY-133B1XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| THMY7264E0LE-80 THMY7264E0LE-75 |
64M Word x 72 Bit Synchronous DRAM Module(64M字x 72位同步DRAM模块)
|
Toshiba Corporation
|
| MT18LSDT6472G-133XX |
64M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 MO-161, DIMM-168
|
Unisonic Technologies Co., Ltd.
|
| HYS64V64220GBDL-7.5-C2 HYS64V64220GBDL-8-C2 |
512MB PC133 (3-3-3) 2-bank. FBGA based. End-of-Life
64M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
INFINEON TECHNOLOGIES AG
|
| IS42SM81600E IS42SM16800E-6BLI IS42RM81600E-7TL IS |
128Mb Mobile Synchronous DRAM
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| MC-4R128CEE6C-845 MC-4R128CEE6B MC-4R128CEE6B-653 |
64M X 16 DIRECT RAMBUS DRAM MODULE, 53 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE 64M-WORD x 16-BIT
|
NEC Corp.
NEC[NEC]
|
