PART |
Description |
Maker |
BAV16WS |
0.15 A, 75 V, SILICON, SIGNAL DIODE SMALL SIGNAL DIODE VOLTAGE RANGE 75 Volts CURRENT 150 mAmpere
|
RECTRON LTD Rectron Semiconductor
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CT38 CT24 |
0.2 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.1 A, 150 V, SILICON, SIGNAL DIODE, DO-35
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2SC311207 2SC3112 2SC3112-B |
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
|
Toshiba Semiconductor
|
2SC2631 2SA1123 |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor] http://
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R6031.522PSYA R6221.530PSYA R6220.530PSYA R9GS2010 |
220 A, 150 V, SILICON, RECTIFIER DIODE R60, 1 PIN 300 A, 150 V, SILICON, RECTIFIER DIODE R62, 2 PIN 300 A, 50 V, SILICON, RECTIFIER DIODE R62, 2 PIN 1000 A, 2000 V, SILICON, RECTIFIER DIODE R9G, 2 PIN 350 A, 2200 V, SILICON, RECTIFIER DIODE 100 A, 200 V, SILICON, RECTIFIER DIODE 200 A, 1500 V, SILICON, RECTIFIER DIODE 1500 A, 1200 V, SILICON, RECTIFIER DIODE 125 A, 800 V, SILICON, RECTIFIER DIODE 150 A, 1200 V, SILICON, RECTIFIER DIODE 400 A, 200 V, SILICON, RECTIFIER DIODE 800 A, 3200 V, SILICON, RECTIFIER DIODE 350 A, 700 V, SILICON, RECTIFIER DIODE 400 A, 900 V, SILICON, RECTIFIER DIODE 100 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1500 V, SILICON, RECTIFIER DIODE 1000 A, 1700 V, SILICON, RECTIFIER DIODE 800 A, 3100 V, SILICON, RECTIFIER DIODE 250 A, 50 V, SILICON, RECTIFIER DIODE 800 A, 3600 V, SILICON, RECTIFIER DIODE 330 A, 500 V, SILICON, RECTIFIER DIODE
|
Powerex, Inc. POWEREX INC
|
1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35 0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35 0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35 0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34 0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35 0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34 0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
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HN1C01FE HN1C01FE-Y |
150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor Toshiba Corporation
|
BAS70 BAS4 BAS40 BAS70-05 BSA40 BAS70-04 BAS70-06 |
RESISTOR,SMD1206,160K,1/4W,5% Schottky Rectifier SCHOTTKY arraySERIES 0.2 A, 70 V, SILICON, SIGNAL DIODE SCHOTTKY array⑩ SERIES SCHOTTKY ARRAY⒙ SERIES SCHOTTKY array SERIES SCHOTTKY array?/a> SERIES Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:50VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:16000uF RoHS Compliant: Yes CSCA-A Series Hall-effect based, open-loop current sensor, Gallant connector, 50 A rms nominal, ±150 A range SCHOTTKYarray SERIES 0.2 A, 40 V, 2 ELEMENT, SILICON, SIGNAL DIODE SILICON, MIXER DIODE
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-LAWRENCE
|
UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE 1 A, 20 V, SILICON, SIGNAL DIODE
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Microsemi, Corp. MICROSEMI[Microsemi Corporation] MICROSEMI CORP-SCOTTSDALE
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ES1PD-E3/84A ES1PD-E3/85A ES1PC-E3/84A ES1PB-E3/84 |
1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 1 A, 150 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
|
Vishay Beyschlag
|
ESH1PC-E3/84A ESH1PB-E3/84A ESH1PB-E3/85A ESH1PCHE |
1 A, 150 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 1 A, 100 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN 1 A, 200 V, SILICON, SIGNAL DIODE, DO-220AA ROHS COMPLIANT, PLASTIC, SMP, 2 PIN
|
Vishay Beyschlag
|
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