| PART |
Description |
Maker |
| GN01096B |
GaAs device - GaAs MMICs - For Low noise Amplifier
|
Matsshita / Panasonic
|
| SPM5001 |
GaAs MMICs
RF Double Balanced Mixer
|
SANYO
|
| BGA616 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 18dBm, SOT343
|
Infineon
|
| BGA416 |
Silicon MMICs - DC ... 3GHz, 23dB, 62dB Isol. Cascode Amp. in SOT143
RF Cascode Amplifier
|
INFINEON[Infineon Technologies AG]
|
| BGB420 BGB420E6327 |
Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| BGA614 |
Silicon MMICs - SiGe 0...5GHz, 15dB Broadband Amplifier, Pout = 12dBm, SOT343
Silicon Germanium Broadband MMIC Amplifier
|
INFINEON[Infineon Technologies AG]
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| SBB-4089 SBB-4089Z |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫，级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
Electronic Theatre Controls, Inc.
http://
|
| Q62703-Q67 LD261 LD261-5 Q62703-Q395 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH405 Q62702-P835 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| OH004 OH10004OH004 |
GaAs device - GaAs Hall Devices
|
Matsshita / Panasonic
|
