| PART |
Description |
Maker |
| CGH40006S |
C BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
CREE INC
|
| TGA2579-FL TGA2579-FL-15 |
25 Watt Ku-Band GaN Power Amplifier
|
TriQuint Semiconductor
|
| RF3932 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| RF3931 |
GaN WIDE-BAND POWER AMPLIFIER
|
RF Micro Devices
|
| ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| CGHV14800F-AMP CGHV14800-TB |
800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| UPD30100GC-40-9EU |
Transmitter; Package: PG-TSSOP-16; Frequency Band: 434.0 MHz 868.0 MHz; Channel Requirements per Band: Single Channel; Modulation Type: ASK / FSK; Transmit Power (at 3V): 10.0 dBm; Temperature Range: -40.0 - 125.0 °C 64位微处理
|
Ecliptek, Corp.
|
| CM421655 CM421255 |
SCR/Diode POW-R-BLOK?Modules 55 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOK⑩ Modules 55 Amperes/1200-1600 Volts
SCR/Diode POW-R-BLOKModules 55 Amperes/1200-1600 Volts
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| CM430890 |
Dual SCR POW-R-BLOK⑩ Modules 90 Amperes/800 Volts
Dual SCR POW-R-BLOK Modules 90 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM530820 |
Dual SCR POW-R-BLOK Modules 200 Amperes/800 Volts
Dual SCR POW-R-BLOK⑩ Modules 200 Amperes/800 Volts
|
POWEREX[Powerex Power Semiconductors]
|
