| PART |
Description |
Maker |
| R5100410 R5100415 R5100315 R5100110 R5100115 R5100 |
150 A, 1200 V, SILICON, RECTIFIER DIODE, DO-8
General Purpose Rectifier (100-150 Amperes Average 1200 Volts) 通用整流器（100-150安培平均1200伏特
4 Pin, MFP, Phototransistor Detector, CTR 50 min @ 5mA, 5V Optocoupler 通用整流器（100-150安培平均1200伏特
|
POWEREX INC
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
Harwin PLC
|
| SR805 SR808 SR810 SR802 SR803 SR804 SR8045 SR810-B |
8 Amp Schottky Barrier Rectifier 20 - 100 Volts
8 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Micro Commercial Components
|
| SSR2010CTC |
20 AMP 100 VOLTS POSITIVE CENTERTAP SCHOTTKY RECTIFIER 20 A, 100 V, SILICON, RECTIFIER DIODE
|
Solid State Devices, Inc.
SSDI[Solid States Devices, Inc]
|
| IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 |
x32 EDO Page Mode DRAM X32号，江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位），江户内存3.3伏，100/83/66兆赫.3伏，100/83/66兆赫56K × 32带扩展数据输出动态内存）
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
|
Integrated Silicon Solution, Inc.
|
| MHR10HUAS MHR14HUAS MHR16HUAS MHR20HUAS MHR24HUAS |
.100 LATCH HEADER .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| FCS-D264SG FCS-D234SG FCS30SG FCS-D226SG FCS14SG F |
.100 IDC SOCKET .100 X .100 [2.54 X 2.54] CENTERLINE
|
Adam Technologies, Inc.
|
| MHF60SGS MHF60SGL MHF20SGL MHF20SGS MHF16SGL MHF16 |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
| MHF64SGL MHF64SGS MHF26SGL MHF26SGS |
.100 IDC LATCH HEADER .100 X .100 [2.54 X 2.54]
|
Adam Technologies, Inc.
|
| SDR9105N SDR9103N |
100 AMP 300 - 500 VOLTS 35 nsec HYPER FAST RECTIFIER 100 A, 300 V, SILICON, RECTIFIER DIODE, TO-258AA
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| APT2X101D20J |
Fast Recovery Epitaxial Diode; Package: ISOTOP®; IO (A): 100; VR (V): 200; trr (nsec): 39; VF (V): 1.1; Qrr (nC): 840; 100 A, 200 V, SILICON, RECTIFIER DIODE
|
Microsemi, Corp.
|
| PDTC115E PDTC115EE PDTC115EEF PDTC115EK PDTC115EM |
NPN resistor-equipped transistors; R1 = 100 kohm, R2 = 100 kohm 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236
NPN resistor-equipped transistors; R1 = 100 kW, R2 = 100 kW
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
