| PART |
Description |
Maker |
| BAV19 BAV21 BAV20 BAV19-TP |
500mW Small Signal Diodes 120 to 250 Volts
0.2 A, 120 V, SILICON, SIGNAL DIODE, DO-35
|
Micro Commercial Components
|
| BAV21W-V-GS08 |
0.2 A, 250 V, SILICON, SIGNAL DIODE
|
VISHAY SEMICONDUCTORS
|
| BAS21 |
0.2 A, 250 V, SILICON, SIGNAL DIODE, TO-236AB
|
GENERAL SEMICONDUCTOR INC
|
| MJ21194 MJ21193 ON1989 MJ2194 |
16 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-204AA
From old datasheet system
16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 250 WATTS
|
MOTOROLA INC
ON Semiconductor
Motorola, Inc
|
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| BAV23S-7-F BAV23C-7-F BAV23A-7-F |
SURFACE MOUNT SWITCHING DIODE 0.4 A, 250 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes Inc.
Diodes, Inc.
|
| MJ15023 MJ15025 ON1984 |
16 AMPERE SILICON POWER TRANSISTORS 200 AND 250 VOLTS 250 WATTS
From old datasheet system
|
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| 87667-4002 0876674002 |
6.35mm (.250) Pitch Power, 2.54mm (.100) Pitch Signal, EXTreme PowerPlus S-Pb Header, Through Hole, Right Angle, Screw Mount, Short Blade, 30 Circuits, Signal 24
|
Molex Electronics Ltd.
|
|
