PART |
Description |
Maker |
89C1632RPQE-25 89C1632RPQH-25 89C1632RPQK-25 89C16 |
16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68 16 Megabit (512K x 32-Bit) MCM SRAM 16兆位12k × 32的位)立方米的SRAM
|
Maxwell Technologies, Inc
|
WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
AS8S512K32P-17L/Q AS8S512K32P-17L/XT AS8S512K32P-1 |
512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 25 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 12 ns, CQFP68 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, CPGA66 512K x 32 SRAM SRAM MEMORY ARRAY 512K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CPGA66
|
Austin Semiconductor, Inc
|
AS8F512K32Q-90/CT AS8F512K32Q-90/IT AS8F512K32Q-90 |
128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CPGA66 128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 15 ns, CQFP68 128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, CQFP68 512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 90 ns, CQFP68 512K x 32 FLASH FLASH MEMORY ARRAY 512K X 32 FLASH 5V PROM MODULE, 120 ns, CQFP68 128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 128K x 32 SRAM SRAM MEMORY ARRAY 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
|
Austin Semiconductor, Inc
|
EMS512K8EMO7-20I EMS512K8EMO7-25I EMS512K8EMO7-35I |
512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, DMA32 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, DMA32 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, DMA32
|
|
WS128K32-25G2ME WS128K32-45G2ME |
512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CQFP68 512K X 8 MULTI DEVICE SRAM MODULE, 45 ns, CQFP68
|
WHITE ELECTRONIC DESIGNS CORP
|
CYM1846PM-30C |
512K X 32 MULTI DEVICE SRAM MODULE, 30 ns, SMA72
|
CYPRESS SEMICONDUCTOR CORP
|
WS128K32NV-17H1C WS128K32NV-17H1I WS128K32NV-17H1M |
512K X 8 MULTI DEVICE SRAM MODULE, 17 ns, CHIP66 512K X 8 MULTI DEVICE SRAM MODULE, 20 ns, CHIP66 512K X 8 MULTI DEVICE SRAM MODULE, 15 ns, CHIP66 512K X 8 MULTI DEVICE SRAM MODULE, 25 ns, CHIP66 512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CHIP66
|
White Electronic Designs, Corp. Microsemi, Corp.
|
MF31M1-M6DAP01 |
512K X 16 MULTI DEVICE SRAM CARD, 200 ns, XMA60
|
|
CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165 512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟 CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes 512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
|