| PART |
Description |
Maker |
| 1N4007GPP 1N4006GPP |
GLASS PASSIVATED JUNCTION SILICON RECTIFIER 1.0 AMP, 50 THRU 1000 VOLTS 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Vishay Intertechnology, Inc.
|
| YF80 |
0.2 A, 800 V, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| UF1K-T3 |
1 A, 800 V, SILICON, SIGNAL DIODE, DO-214AA
|
SENSITRON SEMICONDUCTOR
|
| 1N4003-A 1N4004-A 1N4003-T 1N4002L-T 1N4006L-T 1N4 |
1.0A RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE
1.0A RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| MUR1100ERLG MUR1100EG MUR180E_06 MUR1100E MUR1100E |
SWITCHMODE Power Rectifiers 1 A, 800 V, SILICON, SIGNAL DIODE
|
ONSEMI[ON Semiconductor]
|
| HT11G10 HT17G |
1.0 AMP. Glass Passivated High Efficient Rectifiers
1 A, 800 V, SILICON, SIGNAL DIODE
|
Taiwan Semiconductor Company, Ltd
|
| UF1003-A UF1002-A UF1007-A UF1007-B UF1001-A UF100 |
1.0A ULTRA-FAST RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| BCW67BCW68 BCW68F Q62702-C1555 Q62702-C1893 BCW68 |
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
PNP Silicon AF Transistors (For general AF applications High current gain) 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| NTE290 NTE289 |
800 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Quad Channel, 4/0, 25Mbps, Digital Isolator 16-SOIC -40 to 125
Silicon Complementary Transistors Audio Power Amplifier, Switch
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| BC337 2N5836 BC327 |
800 mA, NPN, Si, SMALL SIGNAL TRANSISTOR
RF SMALL SIGNAL TRANSISTOR
800 mA, PNP, Si, SMALL SIGNAL TRANSISTOR
|
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
|
