| PART |
Description |
Maker |
| RS401L |
DIO GBR 50V0 4A00 1PH 04SIP RS401L 4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
|
Diodes, Inc.
|
| 1N914BT-10 1N914BT-87Y 1N914BT-12A 1N914BT-85 1N91 |
0.15 A, 100 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-35
0.15 A, 75 V, SILICON, SIGNAL DIODE, DO-35
0.2 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-35
0.11 A, 40 V, SILICON, SIGNAL DIODE, DO-34
0.2 A, 200 V, SILICON, SIGNAL DIODE, DO-35
0.13 A, 90 V, SILICON, SIGNAL DIODE, DO-34
0.05 A, 40 V, SILICON, SIGNAL DIODE, DO-34
|
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| UMA5817 UMA5818 UMA5819 MA5817 MVUMA5819 MQUMA5817 |
1 A, 40 V, SILICON, SIGNAL DIODE
ULTRAMITTE SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS 1 A, 30 V, SILICON, SIGNAL DIODE
1 A, 20 V, SILICON, SIGNAL DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
MICROSEMI CORP-SCOTTSDALE
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
| RTD12 BCD25 BCD35 |
0.1 A, 12000 V, SILICON, SIGNAL DIODE
0.1 A, 25000 V, SILICON, SIGNAL DIODE
0.1 A, 35000 V, SILICON, SIGNAL DIODE
|
|
| BYM05-100 BYM05-600 BYM05-400 |
0.5 A, 100 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
0.5 A, 400 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc.
Vishay Beyschlag
|
| UF1003-A UF1002-A UF1007-A UF1007-B UF1001-A UF100 |
1.0A ULTRA-FAST RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1.0A ULTRA-FAST RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Diodes, Inc.
|
| NTE2945 |
SM DIO/SMBJ12A SMB UNI-DIR MOSFET的N沟道，增强模式高速开
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
|
| JANTXSM225UF-A JANSAL225UF-A JANSM200UF-A JANSAL20 |
1 A, SILICON, SIGNAL DIODE MELF-A, 2PIN
1 A, SILICON, SIGNAL DIODE HERMETIC PACKAGE, 2 PIN
|
Sensitron Semiconductor
|
|
