| PART |
Description |
Maker |
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| CRSH1-4 CRSH1-10 CRSH1-6 CRSH1-8 CRSH1-2 CRSH1-5 |
SCHOTTKY BARRIER RECTIFIER 1.0 AMPS, 20 THRU 100 VOLTS 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| BYM11-50 BYM11-800 BYM11-600 BYM11-400 BYM11-100 B |
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
Surface Mount Glass Passivated Junction Fast Switching Rectifier, Forward Current 1.0 A
|
Vishay Beyschlag
|
| MBRS1100TRPBF MBRS190TRPBF MBRS1100TR MBRS190TR |
1 A, 90 V, SILICON, SIGNAL DIODE, DO-214AA
SCHOTTKY RECTIFIER
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA
|
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3 |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 100 V, SILICON, SIGNAL DIODE, DO-213AB PLASTIC PACKAGE-2
1 A, 1300 V, SILICON, SIGNAL DIODE, DO-213AB
|
Vishay Beyschlag
VISHAY SEMICONDUCTORS
|
| BC238ABU BC238ATF BC238TF BC238TAR BC238BU |
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Bulk 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Tape & Reel 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
NPN Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo 100 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Fairchild Semiconductor, Corp.
|
| CMOD6001BK |
0.25 A, 100 V, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| CMPD4448LEADFREE |
0.25 A, 100 V, SILICON, SIGNAL DIODE
|
CENTRAL SEMICONDUCTOR CORP
|
| EP05H10TE8R3 |
0.48 A, 100 V, SILICON, SIGNAL DIODE
|
NIHON INTER ELECTRONICS CORP
|
| 1A2-AP 1A2-TP |
1 A, 100 V, SILICON, SIGNAL DIODE
|
MICRO COMMERCIAL COMPONENTS
|
| BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 |
From old datasheet system
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管（高电流增益低集电极发射极饱和电压
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
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