| PART |
Description |
Maker |
| UFZT600TA |
2 A, 140 V, NPN, Si, POWER TRANSISTOR
|
ZETEX PLC
|
| 2SD2255Q |
7 A, 140 V, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| 2N6339 2N6340 |
High-Power NPN Silicon Transistor(25A200W20V（集电极-发射极），硅NPN大功率晶体管) 25 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Power NPN Silicon Transistor(25A00W40V（集电极-发射极），硅NPN大功率晶体管) 25 A, 140 V, NPN, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| BUT232V03 BUT232V_03 BUT232V |
NPN TRANSISTOR POWER MODULE
NPN TRANSISTOR POWER MODULE
140 A, 300 V, NPN, Si, POWER TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CFA1012 CFA1012O CFC2562O CFA1012Y CFC2562Y |
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 240 hFE. Complementary CFA1012Y
25.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFA1012O
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 70 - 140 hFE. Complementary CFC2562O
PNP SILICON PLANAR POWER TRANSISTOR 进步党硅平面功率晶体
25.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 5.000A Ic, 120 - 240 hFE. Complementary CFC2562Y
|
Continental Device India, Ltd.
CDIL[Continental Device India Limited]
Continental Device Indi...
|
| STP25NM60N STB25NM60N STB25NM60N-1 STF25NM60N STW2 |
From old datasheet system
N-CHANNEL Power MOSFET
N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET N沟道600V.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh
|
http://
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| SF0140BA03073S |
140 MHz Low Loss SAW Filters
From old datasheet system
140 MHz Filter 18 MHz Bandwidth
|
ICS
Integrated Circuit Systems
|
| AD5310 AD5310BRM AD5310BRT AD5310BRM-REEL AD5310BR |
2.5 V to 5.5 V/ 230uA/ Parallel Interface Dual Voltage-Output 8-/10-/12-Bit DACs
2.7 V to 5.5 V, 140 A, Rail-to-Rail Voltage Output 10-Bit DAC
2.7 V to 5.5 V, 140 uA, Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
2.7 V to 5.5 V/ 140 uA/ Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23
Lithium Battery; Voltage Rating:3.6V; Battery Terminals:Connector SERIAL INPUT LOADING, 6 us SETTLING TIME, 10-BIT DAC, PDSO8
2.7 V to 5.5 V. 140 uA. Rail-to-Rail Voltage Output 10-Bit DAC in a SOT-23 2.7伏至5.540微安。轨至轨电压输出10位DAC采用SOT - 23
2.7 V to 5.5 V, 140 µA, Rail-to-Rail Voltage Output 10-Bit DAC
2.5 V to 5.5 V/ 115 uA/ Parallel Interface Single Voltage-Output 8-/10-/12-Bit DACs
|
ANALOG DEVICES INC
AD[Analog Devices]
Analog Devices, Inc.
|
| APT5014LVR |
POWER MOS V 500V 37A 0.140 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT5014B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 500V 37A 0.140 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT5014B2LC APT5014LLC APT5014 |
POWER MOS VI 500V 37A 0.140 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS VITM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| PMBT5550 PMBT5550_3 PMBT5550215 |
NPN high-voltage transistor - Complement: PMBT5401 ; fT min: 100 MHz; hFE max: 250 ; hFE min: 60 ; I<sub>C</sub> max: 300 mA; Polarity: NPN ; Ptot max: 250 mW; VCEO max: 140 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
From old datasheet system
|
NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
