| PART |
Description |
Maker |
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBRP113ZT PBRP113ZT215 |
PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors
|
| PBSS4112PAN |
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4260PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBHV8118T |
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS302PZ |
20 V, 5.5 A PNP low VCEsat (BISS) transistor 20伏，5.5安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| 2PB1424 2PB1424115 |
20 V, 3 A PNP low VCEsat (BISS) transistor 20伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
NXP Semiconductors / Philips Semiconductors
|
| PBSS5160U PBSS5160U115 |
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT323 (SC-70); Container: Tape reel smd 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4021NZ |
20 V, 8 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4120T-15 |
NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
|
