| PART |
Description |
Maker |
| PBRN113E PBRN113EK PBRN113ES PBRN113ET |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 1 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 1 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 1 k搂?
|
NXP Semiconductors
|
| PBRN123E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS301ND |
20 V, 4 A NPN low VCesat (BISS) transistor 20伏，4安NPN型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBRP123YT |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 10 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 10 kW
|
NXP Semiconductors
|
| PBSS4160PAN PBSS4160PAN-15 |
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4021SN115 |
20 V, 7.5 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
| PBSS4041SN |
60 V, 6.7 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS5350D |
50 V, 3 A PNP low VCEsat (BISS) transistor 50伏，3安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| FJP5027R FJP5027RTU FJP5027OTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| PBSS4041NX |
6.2 A NPN low VCEsat (BISS) transistor
|
Philips Semiconductors
|
