PART |
Description |
Maker |
K7S1636U4C |
512Kx36 & 1Mx18 QDR II b4 SRAM
|
Samsung semiconductor
|
K7Q163664B-FC16 K7Q161864B-FC16 |
512Kx36 & 1Mx18 QDR TM b4 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7Q161864B |
(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
|
Samsung semiconductor
|
K7Q161854A K7Q161854A-FC10 K7Q161854A-FC13 |
512Kx36-bit, 1Mx18-bit QDR SRAM
|
Samsung semiconductor
|
K7B161835B K7B163635B |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung semiconductor
|
K7A161830B-QI16 K7A163630B-QC16 K7A161830B-PI25 K7 |
512Kx36 & 1Mx18 Synchronous SRAM
|
Samsung semiconductor
|
K7K1618U2C K7K1636U2C |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
K7N163601MK7N161801M K7N161801M-TC160 |
1M X 18 ZBT SRAM, 3.5 ns, PQFP100 512Kx36 & 1Mx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
K6X8016T3B K6X8016T3B-F K6X8016T3B-Q K6X8016T3B-TF |
CONNECTOR ACCESSORY 512Kx16 bit Low Power Full CMOS Static RAM 512Kx36 & 1Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7N161801A-QFCI25_20_16 K7N161845A-QFCI25_20_16 K7 |
512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 & 1Mx18 Pipelined NtRAM 512Kx36 512Kx36 & 1Mx18 Pipelined NtRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
IS61QDB41M18A IS61QDB451236A |
512Kx36 and 1Mx18 configuration available
|
Integrated Silicon Solu...
|
IDT71P72804 IDT71P72604 IDT71P72604S167BQ IDT71P72 |
1.8V 1M x 18 QDR II PipeLined SRAM 1.8V 512K x 36 QDR II PipeLined SRAM Storage, Cases Tools, Applicator RoHS Compliant: NA Nickel Cadmium Battery Pack; Voltage Rating:12V RoHS Compliant: NA SIGN, FIRE EXTINGUISHER, 100X200MM; RoHS Compliant: NA 18Mb Pipelined QDRII SRAM Burst of 2 35.7流水线推QDRII SRAM的爆 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.5 ns, PBGA165 18Mb Pipelined QDRII SRAM Burst of 2 2M X 9 QDR SRAM, 0.45 ns, PBGA165
|
IDT http:// Integrated Device Technology, Inc.
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