| PART |
Description |
Maker |
| CPD80V |
Chip Form: HIGH VOLTAGE SWITCHING DIODE
Switching Diode High Voltage Switching Diode Chip
|
Central Semiconductor Corp
|
| 1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| Q62702-A3471 BAW78M |
From old datasheet system
Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| RM900DB-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM900HC-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DB-34S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM400DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
| 1SS370 |
Diode Silicon Epitaxial Planar Type High Voltage High Speed Switching Applications
|
TOSHIBA
|
| NSVBAS21TMR6T1G NSVBAS21TMR6T2G |
High Voltage Switching Diode
|
ON Semiconductor
|
