| PART |
Description |
Maker |
| LA4725 1531 |
2-Channel BTL Power Amplifier (30W 30W) with Standby Switch for Car Stereos(用于汽车立体声双BTL功率放大器（30W 30W，带备用开关）)
Monolithic Linear IC
From old datasheet system
2-Channel BTL Power Amplifier 30 W 30 W with Standby Switch for Car Stereos
|
Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
|
| KIA8251 KIA8251AH |
BIPOLAR LINEAR INTEGRATED CIRCUIT (MAX POWER 30W BTL X 4CH AUDIO POWER IC) 双极线性集成电路（最大功0W桥接X 4路音频功率集成电路）
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 2SD313 2SD313D |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
POWER TRANSISTORS(3A/60V/30W)
POWER TRANSISTORS(3A,60V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC[Mospec Semiconductor]
|
| MRF140 |
N-CHANNEL MOS LINEAR RF POWER FET
|
MOTOROLA[Motorola, Inc]
|
| M67741L 67741L M67741 |
RF POWER MODULE 135-160MHz, 12.5V, 30W, FM MOBILE RADIO
135-160MHz,12.5V,30W, FM MOBILE RADIO
From old datasheet system
135-160MHz /12.5V /30W / FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP3N50E MTP3N50E_D ON2604 MTP3N50 MTP3N50E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
