| PART |
Description |
Maker |
| BD8601FS-E2 BD8629FS BD8629FS09 |
FET Controller Type 3ch System Power Supply ICs
|
Rohm
|
| BD8606FV |
FET Controller Type 3ch System Power Supply ICs
|
Rohm
|
| THV3058 |
3CH (Buck/Boost) 2CH CP 1CH HVLDO Controller
|
THine Electronics, Inc.
|
| MB40C950V E428318 |
85 MSPS 3ch 10-bit D/A Converter
From old datasheet system
|
Fujitsu
|
| TA8256BH EE08625 |
From old datasheet system
AUDIO POWER AMPLIFIER 6W x 3CH
|
TOSHIBA[Toshiba Semiconductor]
|
| TD62M3601F E005714 |
3CH LOW SATURATION VOLTAGE SOURCE DRIVER
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| KGF1322 K1322 |
From old datasheet system
Power FET (Ceramic Package Type)
|
OKI[OKI electronic componets]
|
| MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS 7 E-FET™ High Energy Power FET
From old datasheet system
TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
| MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
http://
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
