| PART |
Description |
Maker |
| APT20GF120KRG |
Insulated Gate Bipolar Transistor-NPT Medium Speed; Package: TO-220 [K]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 20; 32 A, 1200 V, N-CHANNEL IGBT, TO-220AB
|
Microsemi, Corp.
|
| APT50GT120B2RDQ2G |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: T-MAX™ [B2]; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 50; 94 A, 1200 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
| SDR1212CTJ SDR1210CTJ SDR1212DRJ |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-257
12AMPS 1000 - 1200 VOLTS 70 nsec ULTRA FAST CENTERTAP RECTIFIER
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
|
| CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| STTH1212G-TR STTH1212 STTH1212D STTH1212G |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| APT150GN120JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| APT100GT120JR |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 60; 123 A, 1200 V, N-CHANNEL IGBT
Thunderbolt IGBT
|
Microsemi, Corp.
Microsemi Corporation
|
| MSM6927GS-2K MSM6927GS-K MSM6947GS-K MSM6927RS |
1200 bps Single Chip FSK MODEM(1200bps单片FSK调制解调
1200 bps Single Chip FSK MODEM(1200bps半双工FSK调制解调ITU-T V.23,双电源供
1200 bps Single Chip FSK MODEM 1200 bps的单片FSK调制解调
|
OKI SEMICONDUCTOR CO., LTD.
|
| WPH220-12 WPT224-22 WPT220-12 WPT132-12 |
392.5 A, 1200 V, SCR
376.8 A, 2200 V, SCR
204.1 A, 1200 V, SCR
|
WESTCODE SEMICONDUCTORS LTD
|
| FZ50A06KL DF100R12KF-A FZ1200R12KF1 |
50 A, 600 V, N-CHANNEL IGBT
100 A, 1200 V, N-CHANNEL IGBT
1200 A, 1200 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
