| PART |
Description |
Maker |
| M13S2561616A-5TG M13S2561616A M13S2561616A-4TG M13 |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
| M13S2561616A1 M13S2561616A-5BIG M13S2561616A-5TIG |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Mem...
Elite Semiconductor Memory Technology Inc.
http://
|
| M13S64164A1 M13S64164A-5BIG M13S64164A-5TIG M13S64 |
1M x 16 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Mem...
|
| M13S128324A09 M13S128324A-4LG M13S128324A-4BG M13S |
4M X 32 DDR DRAM, 0.7 ns, PQFP100
1M x 32 Bit x 4 Banks Double Data Rate SDRAM
|
Elite Semiconductor Memory Technology Inc.
Elite Semiconductor Mem...
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| NT5DS4M32EG |
1M X 32 Bits X 4 Banks Double Data Rate Synchronous RAM
|
NanoAmp Solutions
|
| K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
| MSM27V1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM
|
OKI electronic components
OKI[OKI electronic componets]
|
| W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM
Double Data Rate architecture; two data transfers per clock cycle
4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond
WINBOND ELECTRONICS CORP
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
