| PART |
Description |
Maker |
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| HYB39L256160AC-7.5 HYB39L256160AT-7.5 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| MT48LC4M32LFTG-8ITG MT48V4M32LFTG-8ITG MT48V4M32LF |
8M X 32 SYNCHRONOUS DRAM, 7 ns, PDSO54 0.400 INCH, PLASTIC, TSOP2-54
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
|
STMicroelectronics N.V.
|
| IS42VM16100G IS42VM16100G-6BLI |
512K x16Bits x2Banks Low Power Synchronous DRAM
1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
|
| HY57V28820HCLT-8I HY57V28820HCLT-HI HY57V28820HCLT |
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
4Banks x 4M x 8bits Synchronous DRAM 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
SDRAM - 128Mb
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| HY57V561620 HY57V561620LT-8 HY57V561620LT-P HY57V5 |
4Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor, Inc.
HYNIX[Hynix Semiconductor]
|
| HY5S6B6DLF-SE HY5S6B6DLF-BE HY5S6B6DSF-BE HY5S6B6D |
4Banks x1M x 16bits Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA54
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 |
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
