PART |
Description |
Maker |
ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD Electrically-ErasableComplexPLD
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PEEL22CV10AP-25 PEEL22CV10AP-10 PEEL22CV10AP-15 PE |
PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device PEEL⑩ 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device PEEL 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device PEEL?/a> 22CV10A-7/-10/-15/-25 CMOS Programmable Electrically Erasable Logic Device
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ANACHIP[Anachip Corp] http://
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ATF1500A ATF1500AL |
1500 gate electrically erasable CPLD, 5V, 44 pins 1500 gate electrically erasable low power CPLD, 5V, 44 pins
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Atmel
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24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C compatible 2-wire serial ... The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r 32K I2C Serial EEPROM The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial ... 32KIC Serial EEPROM 32K 1.8V I2C Serial EEPROM
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MICROCHIP[Microchip Technology]
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PA7540P-15 PA7540PI-15 PA7540S-15 PA7540SI-15 PA75 |
PA7540 PEEL Array Programmable Electrically Erasable Logic Array PA7540 PEEL Array? Programmable Electrically Erasable Logic Array PA7540 PEEL Array Programmable Electrically Erasable Logic Array
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http:// ETC ANACHIP[Anachip Corp]
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28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
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X2402 X2402PI X2402I |
ELECTRICALLY ERASABLE PROM
|
XICOR[Xicor Inc.]
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GAL20V8AS-20HC3J GAL20V8AS-15EC3J GAL20V8AS-20QC3J |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
MEAN WELL Enterprises Co., Ltd. STMicroelectronics N.V.
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ISPGAL16Z8-20LJ ISPGAL16Z8-25P ISPGAL16Z8-25LJ ISP |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Electronic Theatre Controls, Inc.
|
W27C010 |
128K X 8 ELECTRICALLY ERASABLE EPROM
|
Winbond
|
BR24L32F-W BR24L32-W BR24L32FJ-W |
4k×8 bit electrically erasable PROM
|
Rohm
|
GAL22LV10C-7LJ GAL22LV10D-5LJ |
Electrically-Erasable PLD 电可擦除可编程逻辑器件
|
Lattice Semiconductor, Corp.
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