| PART |
Description |
Maker |
| AP2120N-1.8TRG1 AP2120N-2.5TRG1 AP2120N-5.0TRG1 AP |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| AP2122AK-1.8TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR 高速，超低噪音LDO稳压
|
BCD Semiconductor Manufacturing, Ltd.
|
| AP2126K-ADJTRG1 |
300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR
|
Diodes
|
| AP2120N-5.0TRG1 AP2120N-2.5TRG1 AP2120N-2.8TRG1 AP |
5 V FIXED POSITIVE LDO REGULATOR, 0.3 V DROPOUT, PDSO3 GREEN, SOT-23, 3 PIN
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing, Ltd.
BCD Semiconductor Manufacturing Limited
|
| FDC6318P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| FDG312P |
High performance trench technology for extremely low R
|
TY Semiconductor Co., Ltd
|
| CES2301 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2313A |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
| FDG315N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
