PART |
Description |
Maker |
GM9014 |
Excellent HFE Linearity HFE : HFE(0.1mA)/ hFE(2mA)=0.95(Typ.)
|
Guilin Strong Micro-Electronics Co., Ltd.
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|
GM9013 |
Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA
|
Guilin Strong Micro-Electronics Co., Ltd.
|
CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE. 0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE. TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
CN453 CN452 |
NPN SILICON PLANAR EPITAXIAL TRANSISTORS 0.900W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 40 - 150 hFE 0.900W General Purpose NPN Plastic Leaded Transistor. 100V Vceo, 1.000A Ic, 40 - 200 hFE
|
Continental Device Indi... CDIL[Continental Device India Limited]
|
CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE NPN SILICON PLANAR TRANSISTOR
|
Continental Device India Limited
|
CIL351 CIL352 |
0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 200 - 480 hFE. 0.300W General Purpose NPN Metal Can Transistor. 70V Vceo, 0.200A Ic, 100 - 250 hFE. NPN SILICON PLANAR TRANSISTORS
|
Continental Device India Limited
|
BDY23A BDY25A BDY25B BDY25C |
Trans GP BJT NPN 60V 6A 3-Pin(2 Tab) TO-3 Trans GP BJT NPN 140V 6A 3-Pin(2 Tab) TO-3
|
New Jersey Semiconductor
|
2N334 2N335 2N334A 2N335/1299 |
Trans GP BJT NPN 3-Pin TO-5 Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2 Trans GP BJT PNP 40V 0.2A 6-Pin LCC-2
|
New Jersey Semiconductor
|
ISD4003-06MEI ISD4003-06MPI ISD4003-06MXD ISD4003- |
240 SEC, SPEECH SYNTHESIZER WITH RCDG, PBGA19 RES 150K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ,和8分钟工期 Single-Chip Voice Record/Playback Devices 4-, 5-, 6-, and 8-Minute Durations 单芯片语音记播放设备4 - - 6 - ,和8分钟工期 RES 130K OHM 1/6W 5% CARBON FILM 单芯片语音记播放设备4 - - - ,和8分钟工期 RES 100 OHM 1/6W 5% CARBON FILM RES 13 OHM 1/6W 5% CARBON FILM RES 110K OHM 1/6W 5% CARBON FILM RES 13K OHM 1/6W 5% CARBON FILM CAP 1000PF 1KV CERAMIC X7R 1812
|
WINBOND ELECTRONICS CORP Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
DS1000 DS1000-75 DS1000-250 DS1000-60 DS1000-100 D |
TRANS SS NPN 45V 100MA SOT-523 5抽头硅延迟线 TRANS SS NPN 50V 100MA SOT23 5抽头硅延迟线 RECTIFIER BRIDGE 1A 200V DB-1 5抽头硅延迟线 RECTIFIER BRIDGE 1A 100V DB-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight RECTIFIER BRIDGE 1A 50V DB-1 TRANSISTOR PNP 45V 100MA SOT563 TRANS SS NPN 50V SOT-323 RECTIFIER BRIDGE 1A 400V DB-1 5-Tap Silicon Delay Line
|
Maxim Integrated Products, Inc. Unisem Group DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] MAXIM - Dallas Semiconductor
|
BUX87 BUX86 Q68000-A5167 Q68000-A3870 |
TRANS PREBIASED NPN 150MW SOT523 NPN SILICON HIGH VWLTAGE SWITCHING TRANSISTORS
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|