| PART |
Description |
Maker |
| IRKT41-04 IRKT41-10 IRKT41-14 IRKT41-12 IRKT41-06 |
Silicon Controlled Rectifier, 62.8 A, 400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1000 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1400 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 1200 V, SCR, TO-240AA
Silicon Controlled Rectifier, 62.8 A, 600 V, SCR, TO-240AA
|
Vishay Semiconductors
|
| VSKH250-08PBF VSKL250-16 SKT250-04PBF SKT250-08PBF |
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 1600 V, SCR, MAGN-A-PAK-5
Silicon Controlled Rectifier, 555 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 800 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 555 A, 1000 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-7
Silicon Controlled Rectifier, 377 A, 400 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
Silicon Controlled Rectifier, 377 A, 1200 V, SCR, ROHS COMPLIANT, MAGN-A-PAK-5
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 170 A/250 A
|
Vishay Semiconductors
Vishay Siliconix
|
| MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V
Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
| X0405BE X0403ME |
SILICON CONTROLLED RECTIFIER,200V V(DRM),4A I(T),TO-202
SILICON CONTROLLED RECTIFIER,600V V(DRM),2.4A I(T),TO-202
From old datasheet system
|
ST Microelectronics
|
| ST280CH06C0 ST280CH04C1 |
Silicon Controlled Rectifier, 1130 A, 400 V, SCR, TO-200AB, EPUK-2
Silicon Controlled Rectifier, 1130 A, 600 V, SCR, TO-200AB, EPUK-2
600V 500A Phase Control SCR in a TO-200AA (A-Puk) package
|
Vishay Semiconductors
International Rectifier
|
| BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system
Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE
Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| MCR264-4-D MCR264-4 |
Silicon Controlled Rectifier Reverse Blocking Thyristor(40A400V硅控整流器反向截止晶闸管) 40 A, 200 V, SCR, TO-220AB
Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
| MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
| BYV27-600 BYV27 BYV27-100 BYV27-150 BYV27-200 BYV2 |
Ultra fast low-loss controlled avalanche rectifiers 1.25 A, 300 V, SILICON, RECTIFIER DIODE
1/2" NPT Bracket; Style: Bracket; Applicable Model: LU7 / LHE-A 1.3 A, 100 V, SILICON, RECTIFIER DIODE
From old datasheet system
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 15112GOA 15102GOA 15104GOA 15102GOAIL 15110GOA 151 |
Silicon Controlled Rectifier
|
Microsemi Corporation
|
|
