| PART |
Description |
Maker |
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| M470L1714BT0-CLB0 M470L1714BT0-CLA0 M470L1714BT0-C |
16Mx64 200pin DDR SDRAM SODIMM based on 8Mx16 Data Sheet
128MB DDR SDRAM MODULE(16Mx64 based on 8Mx16 DDR SDRAM)
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| NT512D72S4PA0GR-75B NT512D72S4PA0GR-7K NT512D72S4P |
256Mb: 64Mx72; unbuffered DDR SDRAM module based on 64Mx4 DDR SDRAM
|
NANYA
|
| HYS64D16000GDL-8-B HYS64D16000GDL-6-B HYS64D16000G |
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
| EDE5116GBSA-5A-E EDE5104GBSA-4A-E EDE5116GBSA-4A-E |
512M bits DDR-II SDRAM 512M比特的DDR - II内存
512M bits DDR-II SDRAM 32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
Elpida Memory, Inc.
|
| HYMD232646A8-H HYMD232646A8-K HYMD232646A8-L HYMD2 |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|
| HYMD232646B8J-D4 HYMD232646B8J-D43 HYMD232646B8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU56422BT-D4 HY5DU56422BT-D43 HY5DU56422BT-J HY |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
DDR SDRAM - 256Mb
|
Hynix Semiconductor, Inc.
|
