| PART |
Description |
Maker |
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| HY57V561620HLT HY57V561620HT-H |
x16 SDRAM
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix
|
| K4X56163PE-LG K4X56163PE-LFG |
16M x16 Mobile DDR SDRAM 1,600 x16移动DDR SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| W986416CH W986416CH-8H |
1M x 16 BIT x 4 BANKS SDRAM
x16 SDRAM
|
Winbond Electronics Corp
|
| UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM
x8 SDRAM
x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
| HY5V26CLF-8I HY5V26CLF-PI HY5V26CLF-HI HY5V26CLF-S |
x16 SDRAM x16内存
|
Vishay Intertechnology, Inc.
|
| IS43DR81280 |
1Gb (x8, x16) DDR2 SDRAM
|
Integrated Silicon Solution, Inc
|
| W981616AH-8 W981616AH-7 |
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
x16 SDRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Winbond Electronics, Corp.
|
| MT41K256M16 MT41K1G4 MT41K256M16HA-125ITE MT41K512 |
4Gb: x4, x8, x16 1.35V DDR3L SDRAM
|
Micron Technology
|
| K4X56163PE-LFG K4X56163PE-LG |
16M x16 Mobile DDR SDRAM
|
Samsung Electronic
|
| HYB18T512161B2F-20 |
512-Mbit x16 DDR2 SDRAM
|
Qimonda AG
|
