PART |
Description |
Maker |
V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速,256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
V53C16256 V53C16256H V53C16256HK60 |
256K x 16bit fast page mode CMOS dynamic RAM 256K x 16 FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp] MOSEL[Mosel Vitelic Corp] Mosel Vitelic Corp
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
|
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
V53C832L35 V53C832L40 V53C832L V53C832L30 V53C832L |
High performance 3.3V 256K x 32 EDO page mode CMOS dynamic RAM HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp] MOSEL[Mosel Vitelic Corp]
|
V53C8258H V53C8258H35 V53C8258H40 V53C8258H45 V53C |
HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
V53C832L30 |
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
V53C16258SHK45 V53C16258HK25 V53C16258HK30 V53C162 |
HIGH PERFORMANCE 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
Mosel Vitelic, Corp. Mosel Vitelic Corp Mosel Vitelic Corp
|
KM44V4104BK KM44V4104B |
4M x 4Bit CMOS Dynamic RAM V(cc): -0.5 to 4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out
|
Samsung semiconductor Samsung Electronic
|
Q67100-Q607 Q67100-Q608 Q67100-Q433 Q67100-Q542 Q6 |
256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256亩4位动态随机存储器的低功56亩4位动态随机存储器 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM 256K X 4 FAST PAGE DRAM, 60 ns, PDIP20
|
http:// SIEMENS A G SIEMENS AG
|
GLT44016 GLT44016-25J4 GLT44016-25TC GLT44016-28J4 |
30ppm/C Drift, 3.9uA, SOT23-3, SC70-3 Voltage Reference 3-SOT-23 -40 to 125 256K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers etc
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