PART |
Description |
Maker |
KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块)
|
Samsung Semiconductor Co., Ltd.
|
MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
KMM372F3200BS1 KMM372F3280BS1 |
32M x 72 DRAM DIMM with ECC using 16Mx4, 4K 8K Refresh, 3.3V 32M × 72配置的DRAM内存的ECC的使6Mx4KK的刷新,3.3
|
Samsung Semiconductor Co., Ltd.
|
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic Samsung semiconductor
|
HYMD232646DP8-H HYMD232726DP8-H HYMD264726DP8-H HY |
1184pin Unbuffered DDR SDRAM DIMMs 32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 32M X 8 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184 16M X 16 DDR DRAM MODULE, 0.7 ns, DMA184
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
HYB39S5121600AT-8 HYB39S5121600AT-7 HYB39S5121600A |
512Mb (32M x 16) PC100 2-2-2 Available Q402 512Mb (32M x 16) PC133 2-2-2 Available Q402 512Mb (32M x 16) PC133 3-3-3 Available Q402 128M X 4 SYNCHRONOUS DRAM, 5 ns, PDSO54
|
INFINEON TECHNOLOGIES AG
|
HY5PS121621CFP-C4 HY5PS12821CFP-C4 HY5PS121621CFP- |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, 0.45 ns, PBGA84 ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, 0.5 ns, PBGA84 ROHS COMPLIANT, FBGA-84
|
Hynix Semiconductor, Inc.
|
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HY5DU121622DTP-D43I |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
D5116ADTA-5CLI-E |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
ELPIDA MEMORY INC
|
E5116ABSE-4C-E |
32M X 16 DDR DRAM, 0.6 ns, PBGA84
|
ELPIDA MEMORY INC
|