PART |
Description |
Maker |
IDT71T75602S133BG IDT71T75802S200BG IDT71T75802S20 |
512K x 36/ 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K x 36, 1M x 18 2.5V Synchronous ZBT?/a> SRAMs 2.5V I/O, Burst Counter Pipelined Outputs BULK COAXIAL CABLE; RE-SHAPABLE VERSION OF PE-047SR 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 4.2 ns, PQFP100 High-Performance Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.2 ns, PBGA119 512K x 36, 1M x 18 2.5V Synchronous ZBTSRAMs 2.5V I/O, Burst Counter Pipelined Outputs 1M X 18 ZBT SRAM, 3 ns, PQFP100 Current-Mode PWM Controller 14-SOIC -40 to 85 1M X 18 ZBT SRAM, 3.8 ns, PQFP100 Current-Mode PWM Controller 8-PDIP -40 to 85 1M X 18 ZBT SRAM, 3.5 ns, PQFP100 Current-Mode PWM Controller 8-SOIC -40 to 85 1M X 18 ZBT SRAM, 5 ns, PQFP100
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IDT Integrated Device Technology, Inc. SRAM
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AS7C3364PFS36A-166TQI AS7C3364PFS32A AS7C3364PFS32 |
3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 9 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 36 STANDARD SRAM, 10 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 16Vz 15.5mA-Izt 0.05 5uA-Ir 12.2Vr DO41-GLASS 5K/REEL 64K X 36 STANDARD SRAM, 12 ns, PQFP100 3.3V 64K X 32/36 pipeline burst synchronous SRAM 64K X 32 STANDARD SRAM, 12 ns, PQFP100
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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HB56UW1672E-5 |
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
ITT, Corp.
|
IBM11M4735C-70J |
x72 EDO Page Mode DRAM Module x72 EDO公司页面模式内存模块
|
Electronic Theatre Controls, Inc.
|
MT54W4MH9B MT54W4MH8B MT54W1MH36B-5 MT54W1MH36B-7. |
36Mb QDRII SRAM 2-WORD BURST 36Mb QDR⑩II SRAM 2-WORD BURST ⑩分6MB四年防务审查II SRAM字爆 36Mb QDR?┥I SRAM 2-WORD BURST
|
Micron Technology, Inc.
|
IS6MC256K-60 |
x64 Interleaved Burst Mode SRAM Module X64的交错突发模式的SRAM模块
|
Central Semiconductor, Corp.
|
CYM74P431BPM-50C CYM74P430BPM-66C CYM74P434BPM-66C |
x64 Selectable Burst Mode SRAM Module X64的可选的突发模式的SRAM模块
|
Analog Integrations, Corp.
|
AS7C252MPFD18A AS7C252MPFD18A_V1.1 AS7C252MPFD18A- |
2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.1 ns, PQFP100 2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.8 ns, PQFP100 2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.5 ns, PQFP100 From old datasheet system Sync SRAM - 2.5V
|
INTEGRATED SILICON SOLUTION INC Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC Alliance Semiconductor ...
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AS7C252MPFS18A AS7C252MPFS18A_V1.3 AS7C252MPFS18A- |
Sync SRAM - 2.5V From old datasheet system 2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.1 ns, PQFP100 2.5V 2M x 18 pipelined burst synchronous SRAM 2M X 18 STANDARD SRAM, 3.8 ns, PQFP100
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Alliance Semiconductor ... ALSC Alliance Semiconductor Corporation Alliance Semiconductor, Corp. INTEGRATED SILICON SOLUTION INC
|
CY7C1514KV18 CY7C1514KV18-300BZXC CY7C1512KV18-300 |
72-Mbit QDR II SRAM 2-Word Burst Architecture Two-word burst on all accesses 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 QDR SRAM, 0.45 ns, PBGA165 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 QDR SRAM, 0.45 ns, PBGA165
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Cypress Semiconductor, Corp.
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HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit DDR II SRAM 4-word Burst
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Renesas Technology / Hitachi Semiconductor
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